类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 120 V |
电流 - 平均整流 (io): | 30A |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 15 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 100 µA @ 120 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | TO-220-3 Full Pack, Isolated Tab |
供应商设备包: | TO-220 Full-Mold |
工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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CURRENT REGULATOR DIODE |
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RECTIFIER FAST RECOVERY 400V 1A |
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DIODE GEN PURP 800V 85A DO203AB |
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DIODE GP 200V 1200A DO200AA R62 |
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DIODE GEN PURP 800V 25A DO220AA |
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1N3880GeneSiC Semiconductor |
DIODE GEN PURP 100V 6A DO4 |
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DIODE GEN PURP 400V 300MA 2DFN |
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JANTXV1N6620Roving Networks / Microchip Technology |
DIODE GEN PURP 220V 1.2A AXIAL |
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EGL34FHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 500MA DO213 |
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AM01ZWSSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1A AXIAL |
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DIODE GEN PURP 1.4KV 250A DO205 |
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FR6JR05GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 6A DO4 |
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1N3912RRoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |