类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 1600 V |
电流 - 平均整流 (io): | 650A |
电压 - 正向 (vf) (max) @ if: | 2.05 V @ 1500 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 2 µs |
电流 - 反向泄漏@ vr: | 50 mA @ 1600 V |
电容@vr, f: | - |
安装类型: | Chassis Mount |
包/箱: | DO-200AB, B-PUK |
供应商设备包: | DO-200AB, B-PUK |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CMS30I30A(TE12L,QMToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 3A M-FLAT |
|
16F120Solid State Inc. |
RECT , 16 AMP 1200V KK DO4 |
|
CDBHA20120-HFComchip Technology |
DIODE SCHOTTKY 120V 20A TO-277B |
|
A197PPowerex, Inc. |
DIODE GEN PURP 1KV 250A DO205 |
|
1N4054RPowerex, Inc. |
DIODE GEN PURP 800V 275A DO205AB |
|
HSB123JTR-ERochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
FR12G02GeneSiC Semiconductor |
DIODE GEN PURP 400V 12A DO4 |
|
FCHS20A12KYOCERA Corporation |
DIODE SCHOTTKY 120V 20A TO-220 F |
|
NRTS1060PFST3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 10A 60V TO277-3 |
|
HSM330GE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 3A 30V SMCG |
|
HT13G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A TS-1 |
|
1N1202RRoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
US3JB-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 60 |