English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 35 V |
| 电流 - 平均整流 (io): | 30A |
| 电压 - 正向 (vf) (max) @ if: | 700 mV @ 30 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 1.5 mA @ 35 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | TO-204AA, TO-3 |
| 供应商设备包: | TO-204AA (TO-3) |
| 工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
XBS206S19R-GTorex Semiconductor Ltd. |
SCHOTTKY BARRIER DIODE |
|
|
SNRVBA130LNT3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 1A 30V SMA |
|
|
1N1126RARoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
|
F40ASemtech |
DIODE GEN PURP 4KV 100MA AXIAL |
|
|
NRVHPRS1DFASanyo Semiconductor/ON Semiconductor |
SR SOD123FA PN 0.8A 200V |
|
|
JTXV1N5553USSemtech |
D MET 3A STD 800V HRV SM |
|
|
HSB83JTL-ERochester Electronics |
DIODE FOR HIGH VOLTAGE SWITCHING |
|
|
R9G02012XXPowerex, Inc. |
DIODE GEN PURP 2KV 1200A DO200AB |
|
|
SR1502HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 15A R-6 |
|
|
JAN1N7039CCU1Roving Networks / Microchip Technology |
RECTIFIER |
|
|
RU 3BVSanken Electric Co., Ltd. |
DIODE GEN PURP 800V 1.1A AXIAL |
|
|
VS-87HFR100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 85A DO203AB |
|
|
RU 1BV1Sanken Electric Co., Ltd. |
DIODE GEN PURP 800V 250MA AXIAL |
