English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 650 V |
| 电流 - 平均整流 (io): | 10A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.7 V @ 10 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 40 µA @ 650 V |
| 电容@vr, f: | 421pF @ 1V, 100kHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-3 |
| 供应商设备包: | TO-220-3 |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UES806HR2Roving Networks / Microchip Technology |
RECTIFIER |
|
|
CMS17(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 2A M-FLAT |
|
|
SURB121CTT4GRochester Electronics |
REC D2PAK ULTRAFST SPCL |
|
|
R36120Roving Networks / Microchip Technology |
RECTIFIER |
|
|
SD060SA30A.T1SMC Diode Solutions |
PIV 30V IO 3A CHIP SIZE 60MIL SQ |
|
|
S40YGeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 40A DO5 |
|
|
R7220606HSOOPowerex, Inc. |
DIODE GEN PURP 600V 650A DO200AB |
|
|
A187RDPowerex, Inc. |
DIODE GEN PURP 400V 150A DO205AA |
|
|
BYW51100Rochester Electronics |
8A, 100V-200V DUAL DIODE |
|
|
1N5712UR-1Roving Networks / Microchip Technology |
SCHOTTKY DIODE |
|
|
AS3BGHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 3A DO214AA |
|
|
BYD33MBULKEIC Semiconductor, Inc. |
DIODE AVALANCHE 1000V 1.3A DO41 |
|
|
SFT17GHA1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 1A TS-1 |
