English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/308 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 50A |
| 电压 - 正向 (vf) (max) @ if: | 1.4 V @ 50 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 200 ns |
| 电流 - 反向泄漏@ vr: | 15 µA @ 200 V |
| 电容@vr, f: | - |
| 安装类型: | Chassis, Stud Mount |
| 包/箱: | DO-203AB, DO-5, Stud |
| 供应商设备包: | DO-203AB (DO-5) |
| 工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N3909ARRoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |
|
|
EL 1VSanken Electric Co., Ltd. |
DIODE GEN PURP 400V 1.5A AXIAL |
|
|
EP01CVSanken Electric Co., Ltd. |
DIODE GEN PURP 1KV 200MA AXIAL |
|
|
1N6079USRoving Networks / Microchip Technology |
DIODE GEN PURP 50V 2A G-MELF |
|
|
R7220208ESOOPowerex, Inc. |
DIODE GEN PURP 200V 800A DO200AB |
|
|
A430BPowerex, Inc. |
DIODE GP 200V 1000A DO200AB |
|
|
NRVUS1DFASanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1A 200V SOD123-2 |
|
|
1N3293ARGeneSiC Semiconductor |
DIODE GEN PURP 600V 100A DO205AA |
|
|
A197RNPowerex, Inc. |
DIODE GEN PURP 800V 250A DO205AB |
|
|
DSA10IM100UC-TRLWickmann / Littelfuse |
POWER DIODE DISCRETES-SCHOTTKY T |
|
|
EU02VSanken Electric Co., Ltd. |
DIODE GEN PURP 400V 1A AXIAL |
|
|
ES3CB-HFComchip Technology |
RECTIFIER SUPER FAST RECOVERY 15 |
|
|
VS-35EPF06L-M3Vishay General Semiconductor – Diodes Division |
RECTIFIER DIODE 35A 600V TO-247A |
