English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | - |
| 电压 - 直流反向 (vr) (max): | - |
| 电流 - 平均整流 (io): | - |
| 电压 - 正向 (vf) (max) @ if: | - |
| 速度: | - |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | - |
| 电容@vr, f: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
| 工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMA50I1600HAWickmann / Littelfuse |
POWER DIODE DISCRETES-RECTIFIER |
|
|
MBR2040CTE3/TURoving Networks / Microchip Technology |
DIODE SCHOTTKY 20A 40V TO220AB |
|
|
RKP300KJ#P1Rochester Electronics |
RKP300KJ PIN DIODE, 30V V(BR) |
|
|
V8PM45-M3/IVishay General Semiconductor – Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
|
|
PU1DMH M3GTSC (Taiwan Semiconductor) |
25NS, 1A, 200V, ULTRA FAST RECOV |
|
|
1N3163Powerex, Inc. |
DIODE STUD MNT 240A 150V DO-9 |
|
|
VS-20ETF12THM3Vishay General Semiconductor – Diodes Division |
RECTIFIER DIODE 20A 1200V TO-220 |
|
|
FR6BR02GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 6A DO4 |
|
|
V12PM6-M3/IVishay General Semiconductor – Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
|
|
MBR6045PTE3/TURoving Networks / Microchip Technology |
DIODE SCHOTTKY 60A 45V TO-247AD |
|
|
JANTX1N6510Roving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA DO213 |
|
|
NRVTS12100PFST3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 12A TO277-3 |
|
|
VS-182NQ030PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 180A D-67 |
