MOSFET N-CH 650V 8.7A TO247-3
IC EEPROM 32KBIT I2C 8UFDFPN
DIODE SCHOTTKY 1200V 30A DIE
INSULATION DISPLACEMENT TERMINAL
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 1200 V |
电流 - 平均整流 (io): | 46A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.75 V @ 30 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 200 µA @ 1200 V |
电容@vr, f: | 1740pf @ 1V, 100kHz |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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