English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/411 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 400 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 9 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 150 ns |
| 电流 - 反向泄漏@ vr: | 1 µA @ 400 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | B, Axial |
| 供应商设备包: | - |
| 工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VS-150UR60DVishay General Semiconductor – Diodes Division |
DIODE GP 600V 150A DO-8 |
|
|
USD245Roving Networks / Microchip Technology |
RECTIFIER |
|
|
S85GRGeneSiC Semiconductor |
DIODE GEN PURP REV 400V 85A DO5 |
|
|
RN 1ZVSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1.5A AXIAL |
|
|
MURH10020GeneSiC Semiconductor |
DIODE GEN PURP 200V 100A D-67 |
|
|
CRG05(TE85L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 800V 1A S-FLAT |
|
|
R5001415XXWAPowerex, Inc. |
DIODE GEN PURP 1.4KV 150A DO205 |
|
|
DPG30I600PMWickmann / Littelfuse |
POWER DIODE DISCRETES-FRED TO-22 |
|
|
LSM1100G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 100V SMBG |
|
|
1N1201BRRoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
|
1N4458Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 15A DO203AA |
|
|
S70GGeneSiC Semiconductor |
DIODE GEN PURP 400V 70A DO5 |
|
|
SS84C-HFComchip Technology |
DIODE SCHOTTKY 8A 40V SMC |
