DIODE SCHOTTKY 20V 60A DO5
RF SHIELD 6" X 6" THROUGH HOLE
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 20 V |
电流 - 平均整流 (io): | 60A |
电压 - 正向 (vf) (max) @ if: | 650 mV @ 60 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 5 mA @ 20 V |
电容@vr, f: | - |
安装类型: | Chassis, Stud Mount |
包/箱: | DO-203AB, DO-5, Stud |
供应商设备包: | DO-5 |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CMG03(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 600V 2A M-FLAT |
|
FR106T/REIC Semiconductor, Inc. |
DIODE GEN PURP 800V 1A DO41 |
|
SFT14G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A TS-1 |
|
KCH30A20KYOCERA Corporation |
DIODE SCHOTTKY 200V 30A TO-247 |
|
R5020210RSWAPowerex, Inc. |
DIODE GEN PURP 200V 100A DO205AA |
|
HER308GT-GComchip Technology |
DIODE GEN PURP 1KV 3A DO201AA |
|
MBR3580GeneSiC Semiconductor |
DIODE SCHOTTKY 80V 35A DO4 |
|
FR105BULKEIC Semiconductor, Inc. |
DIODE GEN PURP 600V 1A DO41 |
|
R6200230XXOOPowerex, Inc. |
DIODE GP 200V 300A DO200AA R62 |
|
R5020410RSWAPowerex, Inc. |
DIODE GEN PURP 400V 100A DO205AA |
|
RU 1AVSanken Electric Co., Ltd. |
DIODE GEN PURP 600V 250MA AXIAL |
|
VS-80PF120WVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 80A DO203AB |
|
CDBU0130R-HFComchip Technology |
DIODE SCHOTTKY 30V 100MA 0603 |