English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 920 mV @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 30 µA @ 200 V |
| 电容@vr, f: | 20pF @ 5V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
| 工作温度 - 结: | -55°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S1KW16KA-1Semtech |
DIODE GEN PURP 16KV 2A SMD |
|
|
US2DWF-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 20 |
|
|
JAN1N5809USRoving Networks / Microchip Technology |
DIODE GEN PURP 100V 6A B-MELF |
|
|
R5031218FSWAPowerex, Inc. |
DIODE GEN PURP 1.2KV 175A DO205 |
|
|
WNSC101200CWQWeEn Semiconductors Co., Ltd |
SILICON CARBIDE POWER DIODE |
|
|
HER601G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 6A R-6 |
|
|
1N6677-1Roving Networks / Microchip Technology |
RECTIFIER DIODE |
|
|
S1MAL M3GTSC (Taiwan Semiconductor) |
1A, 1000V, STANDARD RECOVERY REC |
|
|
SFT15G A1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A TS-1 |
|
|
JANTX1N4938UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 175V 100MA DO213 |
|
|
CMC02(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 400V 1A M-FLAT |
|
|
VS-52PF120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 50A DO203AB |
|
|
JTXV1N4246Semtech |
D MET 1A STD 400V |
