类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 300A |
电压 - 正向 (vf) (max) @ if: | 2.75 V @ 800 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 500 ns |
电流 - 反向泄漏@ vr: | 50 mA @ 400 V |
电容@vr, f: | - |
安装类型: | Chassis Mount |
包/箱: | DO-200AA, A-PUK |
供应商设备包: | DO-200AA, R62 |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CRS20I30B(TE85L,QMToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 2A S-FLAT |
|
RS3AC-HFComchip Technology |
RECTIFIER FAST RECOVERY 50V 3A S |
|
JANTX1N5822US/TRRoving Networks / Microchip Technology |
SCHOTTKY |
|
VS-52PFR120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 50A DO203AB |
|
1N1128Roving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
USC1104Semtech |
DIODE GEN PURP 200V 2.1A AXIAL |
|
ES01FWSanken Electric Co., Ltd. |
DIODE GEN PURP 1.5KV 500MA AXIAL |
|
1N3766RGeneSiC Semiconductor |
DIODE GEN PURP REV 800V 35A DO5 |
|
VS-VSKE71/08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 80A ADDAPAK |
|
S300GRGeneSiC Semiconductor |
DIODE GEN PURP 400V 300A DO9 |
|
BYG21MHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.5A DO214AC |
|
LSM840G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 8A DO215AB |
|
SS34HM3_A/IVishay General Semiconductor – Diodes Division |
3A 40V SM SCHOTTKY RECT SMC |