类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 10 V |
电流 - 平均整流 (io): | 2A |
电压 - 正向 (vf) (max) @ if: | 350 mV @ 2 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 700 µA @ 10 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | SMA (DO-214AC) |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5828RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 40V DO5 |
|
AM01ASanken Electric Co., Ltd. |
DIODE GEN PURP 600V 1A AXIAL |
|
1N483ARoving Networks / Microchip Technology |
DIODE RECT STD RECOVERY |
|
1N2135ARGeneSiC Semiconductor |
DIODE GEN PURP REV 400V 60A DO5 |
|
FR85B02GeneSiC Semiconductor |
DIODE GEN PURP 100V 85A DO5 |
|
RURG3040Rochester Electronics |
RECTIFIER DIODE |
|
RURD640Rochester Electronics |
RECTIFIER DIODE |
|
NRVS1JFLSanyo Semiconductor/ON Semiconductor |
GENERAL PURP RECTIFIER |
|
TSS42L RWGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 200A 1005 |
|
CRS30I30A(TE85L,QMToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 3A S-FLAT |
|
R9G04012XXPowerex, Inc. |
DIODE GEN PURP 4KV 1200A DO200AB |
|
VS-VSKEF500/06PBFVishay General Semiconductor – Diodes Division |
DIODE GP 600V 772A INT-A-PAK |
|
XBS203V19R-GTorex Semiconductor Ltd. |
SCHOTTKY BARRIER DIODE |