类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 200 V |
电流 - 平均整流 (io): | 5A |
电压 - 正向 (vf) (max) @ if: | 1 V @ 3 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 2 µs |
电流 - 反向泄漏@ vr: | 1 µA @ 200 V |
电容@vr, f: | 92pF @ 5V, 1MHz |
安装类型: | Through Hole |
包/箱: | Axial |
供应商设备包: | Axial |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S2KW4C-1NSemtech |
DIODE GEN PURP 4KV 8A MODULE |
|
1N6640Roving Networks / Microchip Technology |
DIODE GEN PURPOSE |
|
FFSM0865BSanyo Semiconductor/ON Semiconductor |
SILICON CARBIDE DIODE 650V 8A PQ |
|
US1D-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 20 |
|
JTXV1N5618Semtech |
D MET 1A STD 600V HRV |
|
HSB123TL-ERochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
GKR71/04GeneSiC Semiconductor |
DIODE GEN PURP 400V 95A DO5 |
|
1N646Roving Networks / Microchip Technology |
SILICON SWITCHING DIODES |
|
S3HVM5Semtech |
DIODE GEN PURP 5KV 2.4A MODULE |
|
GKR130/08GeneSiC Semiconductor |
DIODE GEN PURP 800V 165A DO205AA |
|
EGF1AHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214BA |
|
AK 06V1Sanken Electric Co., Ltd. |
DIODE SCHOTTKY 60V 700MA AXIAL |
|
RS1GAL M3GTSC (Taiwan Semiconductor) |
150NS, 1A, 400V, FAST RECOVERY R |