English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 80 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 850 mV @ 3 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 500 µA @ 80 V |
| 电容@vr, f: | 250pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AD, Axial |
| 供应商设备包: | DO-201AD |
| 工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RU 1VSanken Electric Co., Ltd. |
DIODE GEN PURP 400V 250MA AXIAL |
|
|
JAN1N6639USRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA B-MELF |
|
|
JTX1N5552Semtech |
D MET 3A STD 600V HR |
|
|
ISOPAC0111Semtech |
DIODE GEN PURP 150V 15A |
|
|
R30640Roving Networks / Microchip Technology |
RECTIFIER |
|
|
RURG3050Rochester Electronics |
RECTIFIER DIODE |
|
|
VSSAF3M10-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 3A DO221AC |
|
|
1N6630USRoving Networks / Microchip Technology |
DIODE GEN PURP 900V 1.4A D5B |
|
|
SJPB-D9VRSanken Electric Co., Ltd. |
DIODE SCHOTTKY SMD |
|
|
CMS20I30A(TE12L,QMToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 2A M-FLAT |
|
|
C3D06065E-TRWolfspeed - a Cree company |
ZRECTM 6A, 650V SIC SCHOTTKY DIO |
|
|
R7004203XXUAPowerex, Inc. |
DIODE GEN PURP 4.2KV 300A DO200 |
|
|
1N1126Roving Networks / Microchip Technology |
STANDARD RECTIFIER |
