类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard, Reverse Polarity |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 30A |
电压 - 正向 (vf) (max) @ if: | 1 V @ 30 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 200 ns |
电流 - 反向泄漏@ vr: | 25 µA @ 50 V |
电容@vr, f: | - |
安装类型: | Chassis, Stud Mount |
包/箱: | DO-203AB, DO-5, Stud |
供应商设备包: | DO-5 |
工作温度 - 结: | -40°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N3909ARoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |
|
JAN1N5552Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 3A AXIAL |
|
PMEG4002AESFC315Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
RURD1515Rochester Electronics |
RECTIFIER DIODE, 15A, 150V |
|
1N3261Powerex, Inc. |
DIODE GEN PURP 100V 160A DO205AB |
|
HSS83TA-ERochester Electronics |
RECTIFIER DIODE, 0.15A |
|
1N4530Roving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
NXPSC12650B6JWeEn Semiconductors Co., Ltd |
SILICON CARBIDE POWER DIODE |
|
R9G04412XXPowerex, Inc. |
DIODE GP 4.4KV 1200A DO200AB |
|
GKR240/08GeneSiC Semiconductor |
DIODE GEN PURP 800V 320A DO205AB |
|
UFS310G/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 3A DO215AB |
|
HSM320J/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 3A 20V SMCJ |
|
EU 1ZV1Sanken Electric Co., Ltd. |
DIODE GEN PURP 200V 500MA AXIAL |