English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 2.4A |
| 电压 - 正向 (vf) (max) @ if: | 1.25 V @ 3 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 75 ns |
| 电流 - 反向泄漏@ vr: | 10 µA @ 600 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMC) |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R3440Roving Networks / Microchip Technology |
RECTIFIER |
|
|
VS-242NQ030PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 240A D-67 |
|
|
SE100PWB-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 10A SLIMDPAK |
|
|
VSSA310SHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 3A DO214AC |
|
|
JANTX1N5809USRoving Networks / Microchip Technology |
DIODE GEN PURP 100V 3A B-MELF |
|
|
F1T4G A1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A TS-1 |
|
|
HSM580GE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 80V 5A DO215AB |
|
|
EGL41DHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
|
|
JTXV1N6638USSemtech |
13A ULTRA FAST 115V |
|
|
A177BPowerex, Inc. |
DIODE GEN PURP 200V 100A DO205AA |
|
|
GE08MPS06AGeneSiC Semiconductor |
650V 8A TO-220-2 SIC SCHOTTKY MP |
|
|
VS-APU3006L-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 30A TO247AD |
|
|
BYG10GHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A DO214 |
