English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 400 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 150 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 400 V |
| 电容@vr, f: | 15pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | T-18, Axial |
| 供应商设备包: | TS-1 |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SS35HE3_B/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A DO214AB |
|
|
RM 2ZVSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1.2A AXIAL |
|
|
EGL34FHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 500MA DO213 |
|
|
ES2CB-HFComchip Technology |
RECTIFIER SUPER FAST RECOVERY 15 |
|
|
FR85MR05GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 85A DO5 |
|
|
S6QGeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 6A DO4 |
|
|
VS-150U80DLVishay General Semiconductor – Diodes Division |
DIODE GP 800V 150A DO-8 |
|
|
1N1203BRoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
|
R7000403XXUAPowerex, Inc. |
DIODE GEN PURP 400V 300A DO200AA |
|
|
SBM30-03-TR-ERochester Electronics |
SCHOTTKY DIODE |
|
|
B0540WSHE3-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 40V 500MA SOD323 |
|
|
R5030810RSWAPowerex, Inc. |
DIODE GEN PURP 800V 100A DO205AA |
|
|
1N3173ARoving Networks / Microchip Technology |
STANDARD RECTIFIER |
