类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 300 V |
电流 - 平均整流 (io): | 10A |
电压 - 正向 (vf) (max) @ if: | 1.27 V @ 10 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 35 ns |
电流 - 反向泄漏@ vr: | 1 µA @ 300 V |
电容@vr, f: | 15pF @ 150V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
供应商设备包: | TO-252, (D-Pak) |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SJPB-H9VRSanken Electric Co., Ltd. |
DIODE SCHOTTKY SMD |
|
TSS40L RWGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 200MA 1005 |
|
SJPB-D4Sanken Electric Co., Ltd. |
DIODE SCHOTTKY 40V 1A SJP |
|
VS-80PFR160Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 80A DO203AB |
|
BYG22BHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 100V 2A DO214AC |
|
UPS180/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 80V POWERMITE |
|
1N5832RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 20V DO5 |
|
LSM340G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 3A DO215AB |
|
RURG3080Rochester Electronics |
RECTIFIER DIODE |
|
AU01ZV0Sanken Electric Co., Ltd. |
DIODE GEN PURP 200V 500MA AXIAL |
|
AU01ASanken Electric Co., Ltd. |
DIODE GEN PURP 600V 500MA AXIAL |
|
SD040SA60A.T1SMC Diode Solutions |
PIV 60V IO 1A CHIP SIZE 40MIL SQ |
|
JAN1N1184Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 35A DO203AB |