English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 6A |
| 电压 - 正向 (vf) (max) @ if: | 1.7 V @ 6 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 75 ns |
| 电流 - 反向泄漏@ vr: | 10 µA @ 600 V |
| 电容@vr, f: | 65pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | R6, Axial |
| 供应商设备包: | R-6 |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SM50Semtech |
DIODE GEN PURP 5KV 300MA AXIAL |
|
|
150K20AGeneSiC Semiconductor |
DIODE GEN PURP 200V 150A DO205AA |
|
|
SCKV100K3Semtech |
DIODE GEN PURP 100V 2A AXIAL |
|
|
FR30JR02GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 30A DO5 |
|
|
UES1306HR2Roving Networks / Microchip Technology |
RECTIFIER |
|
|
VS-95PFR80Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 95A DO203AB |
|
|
FFD08S60SRochester Electronics |
600V, 8A, 2.1V, DPAK STEALTH II |
|
|
SCHJ37.5KSemtech |
DIODE GEN PURP 37.5KV 50MA AXIAL |
|
|
6A60GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 6A R-6 |
|
|
UFS380G/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 3A DO215AB |
|
|
SD241HR2Roving Networks / Microchip Technology |
RECTIFIER |
|
|
UFT3010Roving Networks / Microchip Technology |
RECTIFIER |
|
|
R34100Roving Networks / Microchip Technology |
RECTIFIER |
