类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 65 V |
电流 - 平均整流 (io): | 10A |
电压 - 正向 (vf) (max) @ if: | 610 mV @ 5 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 400 µA @ 65 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | TO-220-3 Full Pack, Isolated Tab |
供应商设备包: | TO-220 Full-Mold |
工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N3891RGeneSiC Semiconductor |
DIODE GEN PURP REV 200V 12A DO4 |
|
R5060PFRoving Networks / Microchip Technology |
RECTIFIER |
|
F1T2G A1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A TS-1 |
|
VSSAF3M10-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 3A DO221AC |
|
DR206T/REIC Semiconductor, Inc. |
DIODE GEN PURP 600V 2A DO15 |
|
A190RPEPowerex, Inc. |
DIODE GEN PURP REV 1.5KV DO205AB |
|
SJPJ-H3VRSanken Electric Co., Ltd. |
DIODE SCHOTTKY 30V 2A SMD |
|
S85VGeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 85A DO5 |
|
1SS82TA-ERochester Electronics |
RECTIFIER DIODE, 0.2A |
|
VS-45EPF12L-M3Vishay General Semiconductor – Diodes Division |
RECTIFIER DIODE 45A 1200V TO-247 |
|
JANTX1N6631URoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 1.4A E-MELF |
|
1N1197ARoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
A398BPowerex, Inc. |
DIODE GEN PURP 200V 400A DO200AA |