类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 1.5A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 1.5 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 5 A @ 600 V |
电容@vr, f: | 15pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N7039CCU1Roving Networks / Microchip Technology |
SCHOTTKY RECTIFIER |
|
US8BC-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 10 |
|
AS3BD-M3/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 3A DO214AA |
|
1N6628US/TRRoving Networks / Microchip Technology |
UFR,FRR |
|
CDBHA10100-HFComchip Technology |
DIODE SCHOTTKY 100V 10A TO-277B |
|
SRT13HA1GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A TS-1 |
|
US1J-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 60 |
|
S2JAL M3GTSC (Taiwan Semiconductor) |
2A, 600V, STANDARD RECOVERY RECT |
|
EL 1ZVSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1.5A AXIAL |
|
R5011610XXWAPowerex, Inc. |
DIODE GEN PURP 1.6KV 100A DO205 |
|
S16DRGeneSiC Semiconductor |
DIODE GEN PURP 200V 16A DO220AA |
|
JTX1N5811USSemtech |
D MET 6A SFST 150V HR SM |
|
PS411225Powerex, Inc. |
DIODE GP 1.2KV 2500A POWRBLOK |