English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 150A |
| 电压 - 正向 (vf) (max) @ if: | 1.47 V @ 600 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | - |
| 电容@vr, f: | - |
| 安装类型: | Chassis, Stud Mount |
| 包/箱: | DO-205AA, DO-8, Stud |
| 供应商设备包: | DO-205AA (DO-8) |
| 工作温度 - 结: | -40°C ~ 180°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
D629N44TPRRochester Electronics |
RECTIFIER DIODE MODULE |
|
|
UES806Roving Networks / Microchip Technology |
RECTIFIER |
|
|
RS1K-HFComchip Technology |
RECTIFIER FAST RECOVERY 800V 1A |
|
|
HSM221CTR-ERochester Electronics |
RECTIFIER DIODE, 0.1A |
|
|
NSVR351SDSA3T1GSanyo Semiconductor/ON Semiconductor |
SBD SERIES 30MA 5V |
|
|
VS-SD1100C30CVishay General Semiconductor – Diodes Division |
DIODE GP 3KV 1100A B43 PUK |
|
|
JANTXV1N1190RRoving Networks / Microchip Technology |
DIODE GEN PURP 600V 35A DO203AB |
|
|
JANTXV1N6631USRoving Networks / Microchip Technology |
DIODE GEN PURP 1.1KV 1.4A D5B |
|
|
PM6Semtech |
DIODE GEN PURP 600V 2A AXIAL |
|
|
UPS3200/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 3A 200V POWERMITE |
|
|
UF3001-GComchip Technology |
DIODE GEN PURP 50V 3A DO201AA |
|
|
F1892D1000Sensata Technologies – Crydom |
DIODE GEN PURP 1KV 90A MODULE |
|
|
BYG10MHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.5A DO214AC |
