English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 6A |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 6 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 10 µA @ 50 V |
| 电容@vr, f: | 60pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | R6, Axial |
| 供应商设备包: | R-6 |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIDC73D170E6X1SA2IR (Infineon Technologies) |
DIODE GEN PURP 1.7KV 100A WAFER |
|
|
BAT43-L0 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY DO-35 |
|
|
SIDC06D65C8X1SA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 20A WAFER |
|
|
SIDC04D60F6X1SA3IR (Infineon Technologies) |
DIODE GEN PURP 600V 9A WAFER |
|
|
JANTX1N6630UMicrosemi |
DIODE GEN PURP 900V 1.4A E-MELF |
|
|
SIDC53D120H6X1SA3IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 100A WAFER |
|
|
R9G20811ASOOPowerex, Inc. |
DIODE FAST REC R9G 1100A 800V |
|
|
GP10BE-075E3/93Vishay General Semiconductor – Diodes Division |
RECTIFIER |
|
|
1SS400G9JTE61ROHM Semiconductor |
DIODE GENERAL PURPOSE SMD |
|
|
RB751S-40T9TE61ROHM Semiconductor |
DIODE SCHOTTKY SMD |
|
|
1N3613GP-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
|
UG06DHA1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 600MA TS-1 |
|
|
R9G20212CSOOPowerex, Inc. |
DIODE GP 200V 1200A DO200AB |
