类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 2.5A |
电压 - 正向 (vf) (max) @ if: | - |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | - |
电容@vr, f: | 40pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | R-3, Axial |
供应商设备包: | R-3 |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FCSP0530TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 500MA FLIPKY |
|
5818SMGE3/TR13Microsemi |
DIODE SCHOTTKY 30V 1A DO215AA |
|
TVR06J-5700M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
1N4004G BKCentral Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
|
JANTXV1N6625Roving Networks / Microchip Technology |
DIODE GEN PURP 1.1KV 1A D5A |
|
RFN3B2STLROHM Semiconductor |
DIODE GEN PURPOSE CPD |
|
RU 3BSanken Electric Co., Ltd. |
DIODE GEN PURP 800V 1.1A AXIAL |
|
RB521S-309HKTE61ROHM Semiconductor |
DIODE SCHOTTKY SMD |
|
IRD3CH24DF6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
1N4004SP AP-RPCUCentral Semiconductor |
DIODE GEN PURPOSE DO41 |
|
DHF30IM600PNWickmann / Littelfuse |
DIODE GEN PURP 600V 15A TO220FP |
|
SS35-1HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A SMD |
|
R9G21209CSOOPowerex, Inc. |
DIODE FAST REC R9G 900A 1200V |