类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 60 V |
电流 - 平均整流 (io): | 10A (DC) |
电压 - 正向 (vf) (max) @ if: | 0.58 V @ 10 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 1 mA @ 60 V |
电容@vr, f: | 345pF @ 10V, 1MHz |
安装类型: | Surface Mount |
包/箱: | L-FLAT™ |
供应商设备包: | L-FLAT™ (4x5.5) |
工作温度 - 结: | -40°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTX1N6642UBRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA UB |
|
F1T2G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A TS-1 |
|
S1A-13-GZetex Semiconductors (Diodes Inc.) |
DIODE GENERAL PURPOSE SMA |
|
1H6G-TPMicro Commercial Components (MCC) |
DIODE HI EFF R-2 |
|
RB751S-407HGTE61ROHM Semiconductor |
DIODE SCHOTTKY SMD |
|
RB031B-40TLROHM Semiconductor |
DIODE SCHOTTKY CPD |
|
SIDC05D60C8X7SA2IR (Infineon Technologies) |
DIODE GEN PURP 600V 15A WAFER |
|
JAN1N3600Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 200MA DO7 |
|
GI811-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AC |
|
IRD3CH31DD6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
MDO1200-18N1Wickmann / Littelfuse |
DIODE GEN PURP 1.8KV Y1-CU |
|
RL102-N-0-4-APMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 1A A-405 |
|
70UR60 G BK RVishay / Semiconductor - Opto Division |
DIODE GEN PURP 600V 250A DO205AB |