类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 2 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 100 ns |
电流 - 反向泄漏@ vr: | 500 µA @ 600 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | Axial |
供应商设备包: | - |
工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DB2631400LPanasonic |
DIODE GEN PURP 30V 30MA SOD882 |
|
STTH12R06DSTMicroelectronics |
DIODE GEN PURP 600V 12A TO220AC |
|
SRT110 A1GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A TS-1 |
|
SDT12A120P5Q-13Zetex Semiconductors (Diodes Inc.) |
SCHOTTKY RECTIFIER PDI5 |
|
S1D-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 1A DO214AA |
|
RGP10D-5303M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
SIDC161D170HX1SA2IR (Infineon Technologies) |
DIODE GEN PURP 1.7KV 300A WAFER |
|
1N6080USRoving Networks / Microchip Technology |
DIODE GEN PURP 100V 2A G-MELF |
|
MBR5200VPC-G1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY DO-27 |
|
RU 2MSanken Electric Co., Ltd. |
DIODE GEN PURP 400V 1.1A AXIAL |
|
JANTXV1N5807USRoving Networks / Microchip Technology |
DIODE GEN PURP 50V 3A D5B |
|
GP2D020A065BSemiQ |
DIODE SCHOTTKY 650V 58A TO247-2 |
|
VS-STT250M14MPBFVishay General Semiconductor – Diodes Division |
MODULE DIODE MAP COMPRESSED |