类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 200 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 3 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 5 µA @ 200 V |
电容@vr, f: | 30pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-201AD, Axial |
供应商设备包: | DO-201AD |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N6845U3Roving Networks / Microchip Technology |
DIODE SCHOTTKY 45V 30A U3 |
|
5819SMGE3/TR13Microsemi |
DIODE SCHOTTKY 40V 1A DO215AA |
|
IRD3CH9DD6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
IRD3CH16DF6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
SS14-6605HE3J_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 1A DO214AC |
|
RL105GP-APMicro Commercial Components (MCC) |
DIODE RECTUFUER 1A A-405 |
|
1SS400ZTTE61ROHM Semiconductor |
DIODE GENERAL PURPOSE SMD |
|
BAS85-L0 L1GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY MINIMELF |
|
BY254GP-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO201AD |
|
SS36-61HE3J_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A SMD |
|
DB2S40600LPanasonic |
DIODE SCHOTTKY 40V 100MA SC79 |
|
IRD3CH82DF6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
GP10M-7007M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AL |