English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 800 V |
| 电流 - 平均整流 (io): | 300A |
| 电压 - 正向 (vf) (max) @ if: | 1.4 V @ 800 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 13 µs |
| 电流 - 反向泄漏@ vr: | 50 mA @ 800 V |
| 电容@vr, f: | - |
| 安装类型: | Chassis, Stud Mount |
| 包/箱: | DO-205AB, DO-9, Stud |
| 供应商设备包: | DO-205AB, DO-9 |
| 工作温度 - 结: | -65°C ~ 190°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N4534URMicrosemi |
DIODE SWITCHING |
|
|
D121N12BXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 230A |
|
|
GP10J-086M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AL |
|
|
RDS81210XXPowerex, Inc. |
DIODE GEN PURP 1.2KV 10000A |
|
|
RJU6054TDPP-EJ#T2Renesas Electronics America |
DIODE GEN PURP 600V 30A TO220FP |
|
|
JAN1N5816Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 20A DO203AA |
|
|
GP10W-5411M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AL |
|
|
SS14-6HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 1A DO214AC |
|
|
IRKE71/16AVishay General Semiconductor – Diodes Division |
DIODE GP 1.6KV 80A ADD-A-PAK |
|
|
CRNA20-1200Sensata Technologies – Crydom |
DIODE GP 1.2KV 12.7A TO220AB |
|
|
RDS82280XXPowerex, Inc. |
DIODE GEN PURP 2.2KV 8000A |
|
|
MBR5200VPC-E1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 200V 5A DO27 |
|
|
GP2D010A065CSemiQ |
DIODE SCHOTTKY 650V 30A TO252 |
