类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 40 V |
电流 - 平均整流 (io): | 10A |
电压 - 正向 (vf) (max) @ if: | 600 mV @ 10 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 1 mA @ 40 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | TO-220-3 Full Pack, Isolated Tab |
供应商设备包: | ITO-220AB |
工作温度 - 结: | -40°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIDC11D60SIC3IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 4A WAFER |
|
R6101030XXYZPowerex, Inc. |
DIODE GEN PURP 1KV 300A DO205 |
|
HER108S-APMicro Commercial Components (MCC) |
DIODE GPP HE 1A A-405 |
|
NGTD15R65F2SWKSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 650V DIE |
|
RB055LA-40TFTRROHM Semiconductor |
DIODE SCHOTTKY 40V 3A PMDT |
|
1N3614GP-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
SIDC14D60F6X1SA3IR (Infineon Technologies) |
DIODE SWITCHING 600V WAFER |
|
LSR103-J0 L0TSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A MELF |
|
12FR10B BN BK RVishay / Semiconductor - Opto Division |
DIODE GEN PURP 100V 12A DO203AA |
|
56DN06ELEMXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 6400A |
|
IRD3CH24DD6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
CRNB20-1200PTSensata Technologies – Crydom |
DIODE GP 1.2KV 12.7A TO220AB |
|
1N5404-AZetex Semiconductors (Diodes Inc.) |
DIODE GPP 3A DO-201AD |