类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 40A |
电压 - 正向 (vf) (max) @ if: | 1.6 V @ 40 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 79 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 600 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | TO-247-2 |
供应商设备包: | TO-247-2 |
工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RB521S-30GDTE61ROHM Semiconductor |
DIODE SCHOTTKY SMD |
|
VS-S1573Vishay General Semiconductor – Diodes Division |
DIODE GENERAL PURPOSE TO220 |
|
1SS4007STE61ROHM Semiconductor |
DIODE GENERAL PURPOSE SMD |
|
R9G21011CSOOPowerex, Inc. |
DIODE FAST REC R9G 1100A 1000V |
|
MBRB10H45-E3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY TO-263AB |
|
RS1GQ-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURPOSE SMD |
|
SIDC09D60F6X1SA2IR (Infineon Technologies) |
DIODE GEN PURP 600V 30A WAFER |
|
SIDC88D65DC8AX7SA2IR (Infineon Technologies) |
DIODE GENERAL PURPOSE 650V |
|
JANTXV1N914URRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 200MA DO213AA |
|
1N4003-N-0-3-APMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 1A DO41 |
|
20ETS12FPVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220FP |
|
SRA256GP-TPMicro Commercial Components (MCC) |
DIODE |
|
CGRBT305-HFComchip Technology |
DIODE GENERAL PURPOSE 2114 SMD |