类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 3.6 V |
宽容: | ±0.5% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 10 Ohms |
电流 - 反向泄漏@ vr: | 100 µA @ 1 V |
电压 - 正向 (vf) (max) @ if: | 1 V @ 100 mA |
工作温度: | - |
安装类型: | Through Hole |
包/箱: | Axial |
供应商设备包: | DO-41G |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MM3Z5V1T1Rochester Electronics |
DIODE ZENER 5.1V 200MW SOD323 |
|
NTE5285ANTE Electronics, Inc. |
DIODE ZENER 100V 50W DO5 |
|
BZT52C16S RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 16V 200MW SOD323F |
|
TLZ5V1A-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 500MW SOD80 |
|
SZMM3Z22VT1GXNexperia |
SZMM3Z22VT1G/SOD323/SOD2 |
|
MMSZ5237C-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 500MW SOD123 |
|
BZX84C20VLT116ROHM Semiconductor |
DIODE ZENER 20V 250MW SSD3 |
|
JANTX1N746DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.3V 500MW DO213AA |
|
BZD27C51P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 800MW DO219AB |
|
1PGSMC5352HR7GTSC (Taiwan Semiconductor) |
DIODE ZENER 15V 5W DO214AB |
|
PZU15BA,115Nexperia |
DIODE ZENER 15V 320MW SOD323 |
|
JAN1N4973USRoving Networks / Microchip Technology |
DIODE ZENER 43V 5W D5B |
|
ZMY75-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 1W DO213AB |