English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 68 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 160 Ohms |
| 电流 - 反向泄漏@ vr: | 100 nA @ 51 V |
| 电压 - 正向 (vf) (max) @ if: | 1 V @ 10 mA |
| 工作温度: | -65°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AC, MINI-MELF, SOD-80 |
| 供应商设备包: | Mini MELF |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MMSZ5251B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 500MW SOD123 |
|
1PMT4121CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 33V 1W DO216 |
|
BZT52H-C6V8,115Nexperia |
DIODE ZENER 6.8V 375MW SOD123F |
|
BZT55B13 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 13V 500MW MINI MELF |
|
MMBZ5255BRochester Electronics |
DIODE ZENER 28V 225MW SOT23-3 |
|
BZT55C6V8-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 500MW SOD80 |
|
1N5747BRoving Networks / Microchip Technology |
DIODE ZENER 30V 500MW DO35 |
|
BZT52C13-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 410MW SOD123 |
|
GDZ2V2B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.2V 200MW SOD323 |
|
1SMB5932HR5GTSC (Taiwan Semiconductor) |
DIODE ZENER 20V 3W DO214AA |
|
JANTX1N4482DRoving Networks / Microchip Technology |
DIODE ZENER 51V 1.5W DO41 |
|
SMBJ4760AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 68V 2W SMBJ |
|
CMZ5945B BK PBFREECentral Semiconductor |
DIODE ZENER 68V 500MW SMA |
