类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Cut Tape (CT)Tape & Box (TB) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 16 V |
宽容: | - |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 45 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 16 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GDZ9V1B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 200MW SOD323 |
|
JANTXV1N5543D-1Roving Networks / Microchip Technology |
DIODE ZENER 25V 500MW DO35 |
|
JANTX1N6340USRoving Networks / Microchip Technology |
DIODE ZENER 47V 500MW MELF |
|
BZX884S-C27YLNexperia |
BZX884S-C27/SOD882BD/XSON2 |
|
JANTX1N4108D-1Roving Networks / Microchip Technology |
DIODE ZENER 14V 500MW DO35 |
|
MMBZ5263B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 225MW SOT23-3 |
|
SML4757AHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 1W DO214AC |
|
KDZVTFTR4.3BROHM Semiconductor |
DIODE ZENER 4.3V 1W PMDU |
|
1PMT5952E3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 130V 3W DO216AA |
|
MMBZ5259C-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 225MW SOT23-3 |
|
BZX84C5V1LT116ROHM Semiconductor |
DIODE ZENER 5.1V 250MW SSD3 |
|
JAN1N4617D-1Roving Networks / Microchip Technology |
DIODE ZENER 2.4V 500MW DO35 |
|
CZRF52C5V1-HFComchip Technology |
DIODE ZENER 5.1V 200MW 1005 |