English
简体中文
MEMS OSC XO 33.0000MHZ H/LV-CMOS
DIODE ZENER 10V 410MW SOD123
DIODE ZENER 13V 0.2W 2.19% UNI
JUMPER RSFP-LP-1V-R-250 8"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 10 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 410 mW |
| 阻抗（最大）（zzt）: | 5.2 Ohms |
| 电流 - 反向泄漏@ vr: | 100 nA @ 7.5 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-123 |
| 供应商设备包: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N4742E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 12V 1W DO204AL |
|
1PMT4110E3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 16V 1W DO216 |
|
MMSZ5232BT1GRochester Electronics |
ZENER DIODE, 5.6V, 5%, 0.5W, UNI |
|
BZT52C20-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 410MW SOD123 |
|
PZU3.3BL,315Nexperia |
DIODE ZENER 3.3V 250MW DFN1006-2 |
|
JAN1N5525C-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
|
BZD27C160P MHGTSC (Taiwan Semiconductor) |
DIODE ZENER 162V 1W SUB SMA |
|
TDZ10J,115Nexperia |
DIODE ZENER 10V 500MW SOD323F |
|
1PMT4112E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 18V 1W DO216 |
|
BZD27B6V8P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 800MW DO219AB |
|
SMBZ5926B-E3/5BVishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 3W DO214AA |
|
JANTXV1N4127-1Roving Networks / Microchip Technology |
DIODE ZENER 56V 500MW DO35 |
|
BZD27C18P-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 800MW DO219AB |