English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 3.3 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 10 mW |
| 阻抗（最大）（zzt）: | 28 Ohms |
| 电流 - 反向泄漏@ vr: | 25 µA @ 1 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AB, MELF |
| 供应商设备包: | DO-213AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZX85C82-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 82V 1.3W DO41 |
|
JANTX1N6331USRoving Networks / Microchip Technology |
DIODE ZENER 20V 500MW MELF |
|
SMBJ5373C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 68V 5W SMBJ |
|
BZX84C39-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 300MW SOT23-3 |
|
1N4973USSemtech |
DIODE ZENER 43V 5W |
|
TZX9V1D-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 500MW DO35 |
|
ABZT52B5V6-HFComchip Technology |
DIODE ZENER 5.6V 500MW SOD123 |
|
BZM55B3V3-TR3Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.3V 500MW MICROMELF |
|
BZD27B75P-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 800MW DO219AB |
|
CZRFR7V5B-HFComchip Technology |
DIODE ZENER 7.5V 200MW 1005 |
|
BZG04-36-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 1.25W DO214AC |
|
NTE5181AKNTE Electronics, Inc. |
DIODE ZENER 6.8V 10W DO4 |
|
JANTX1N4102UR-1Roving Networks / Microchip Technology |
DIODE ZENER 8.7V 500MW DO213AA |
