类型 | 描述 |
---|---|
系列: | BZG03C-M |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 15 V |
宽容: | ±6% |
功率 - 最大值: | 1.25 W |
阻抗(最大)(zzt): | 10 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 11 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 500 mA |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5923BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 1.5W DO204AL |
|
ZM4744A-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 1W DO213AB |
|
MMBZ5254ELT1Rochester Electronics |
DIODE ZENER 27V 225MW SOT23-3 |
|
BZM55C13-TR3Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 500MW MICROMELF |
|
BZX84B43Diotec Semiconductor |
DIODE ZENER 43V 300MW SOT23-3 |
|
CZRB5354B-HFComchip Technology |
DIODE ZENER 17V 5W DO214AA |
|
MMBZ4710-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 25V 350MW SOT23-3 |
|
TSZU52C3V6 RGGTSC (Taiwan Semiconductor) |
DIODE ZENER 3.6V 150MW 0603 |
|
1N751A-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO35 |
|
BZT52B8V2-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 410MW SOD123 |
|
1N5245BTRSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 15V 500MW DO35 |
|
BZG05B43-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 1.25W DO214AC |
|
1N5224B-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 2.8V 500MW DO35 |