类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 12 V |
宽容: | ±5% |
功率 - 最大值: | 1.5 W |
阻抗(最大)(zzt): | 6.5 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 9.1 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -65°C ~ 150°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N4617DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 2.4V 500MW DO213AA |
|
BZM55B22-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 500MW MICROMELF |
|
ZMM33BDiotec Semiconductor |
DIODE ZENER 33V 500MW SOD80C |
|
1N4911ARoving Networks / Microchip Technology |
DIODE ZENER 12.8V 400MW DO7 |
|
SZ1SMA5926BT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 11V 500MW SMA |
|
1SMB5927 M4GTSC (Taiwan Semiconductor) |
DIODE ZENER 12V 3W DO214AA |
|
CDLL5241ARoving Networks / Microchip Technology |
DIODE ZENER 11V 10MW DO213AB |
|
TZX33A-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 500MW DO35 |
|
BZG05C82-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 82V 1.25W DO214AC |
|
SMBZ5926B-M3/52Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 550MW DO214AA |
|
1N5241B A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 11V 500MW DO35 |
|
HZS4.3NB2TD-ERochester Electronics |
DIODE ZENER 0.4W |
|
1N5930BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 16V 1.25W DO213AB |