类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, PDZ-GW |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 8.2 V |
宽容: | ±2.07% |
功率 - 最大值: | 365 mW |
阻抗(最大)(zzt): | 10 Ohms |
电流 - 反向泄漏@ vr: | 500 nA @ 5 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 100 mA |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SOD-123 |
供应商设备包: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMSZ9V1ET1Rochester Electronics |
DIODE ZENER 9.1V 500MW SOD123 |
|
BZD17C12P R3GTSC (Taiwan Semiconductor) |
DIODE ZENER 12V 800MW SUB SMA |
|
TLZ20B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 500MW SOD80 |
|
CZRER52C2V7Comchip Technology |
DIODE ZENER 2.7V 150MW 0503 |
|
MMBZ4712-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 28V 350MW SOT23-3 |
|
BZX84C9V1 TRCentral Semiconductor |
DIODE ZENER 9.1V 350MW SOT23 |
|
MMBZ5250B-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 225MW SOT23-3 |
|
SZ1SMA5917BT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 4.7V 1.5W SMA |
|
JAN1N4958CRoving Networks / Microchip Technology |
DIODE ZENER 10V 5W E AXIAL |
|
JAN1N4491DRoving Networks / Microchip Technology |
DIODE ZENER 120V 1.5W DO41 |
|
1N5938AP/TR12Roving Networks / Microchip Technology |
DIODE ZENER 36V 1.5W DO204AL |
|
JAN1N4370D-1Roving Networks / Microchip Technology |
DIODE ZENER 2.4V DO35 |
|
SMZJ3806B-E3/52Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 1.5W DO214AA |