类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/406 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 33 V |
宽容: | ±5% |
功率 - 最大值: | 1.5 W |
阻抗(最大)(zzt): | 25 Ohms |
电流 - 反向泄漏@ vr: | 50 nA @ 26.4 V |
电压 - 正向 (vf) (max) @ if: | 1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NZX30A,133Nexperia |
DIODE ZENER 30V 500MW ALF2 |
|
1N756A TR PBFREECentral Semiconductor |
DIODE ZENER 8.2V 500MW DO35 |
|
BZT52C4V7-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 410MW SOD123 |
|
JANTX1N4107DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 13V 500MW DO213AA |
|
BZT52B9V1S RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 9.1V 200MW SOD323F |
|
1PMT5953B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 150V 3W DO216AA |
|
1PGSMA4749HR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 24V 1.25W DO214AC |
|
BZG04-9V1-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 1.25W DO214AC |
|
MM5Z6V8ST1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 6.8V 500MW SOD523 |
|
1PMT5928CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 13V 3W DO216AA |
|
JAN1N4624-1Roving Networks / Microchip Technology |
DIODE ZENER 4.7V 500MW DO35 |
|
FLZ13VBRochester Electronics |
DIODE ZENER 12.9V 500MW SOD80 |
|
CZRF3V3B-HFComchip Technology |
DIODE ZENER 3.3V 200MW 1005 |