类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 15 V |
宽容: | ±5% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 14 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 11.4 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -65°C ~ 200°C (TA) |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PLZ5V6A-G3/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 5.42V 960MW DO219AC |
|
DL4748A-TPMicro Commercial Components (MCC) |
DIODE ZENER 22V 1W MELF |
|
JANTXV1N4101D-1Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 500MW DO35 |
|
ACZRA4732-HFComchip Technology |
DIODE ZENER 4.7V 1W DO214AC |
|
BZX84-C43,215Nexperia |
DIODE ZENER 43V 250MW TO236AB |
|
SZMMSZ5268BT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 82V 500MW SOD123 |
|
CDLL4684Roving Networks / Microchip Technology |
DIODE ZENER 3.3V 500MW DO213AA |
|
BZD27B30P-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 800MW DO219AB |
|
TZX9V1A-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 500MW DO35 |
|
1PMT5943CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 56V 3W DO216AA |
|
1N5728DRoving Networks / Microchip Technology |
DIODE ZENER 4.7V 500MW DO35 |
|
MMBZ5255C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 28V 225MW SOT23-3 |
|
1N5944BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 62V 1.5W DO204AL |