English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 2.7 V |
| 宽容: | ±20% |
| 功率 - 最大值: | 10 mW |
| 阻抗（最大）（zzt）: | 30 Ohms |
| 电流 - 反向泄漏@ vr: | 75 µA @ 1 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AB, MELF |
| 供应商设备包: | DO-213AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2M14Z R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 14V 2W DO204AC |
|
BZX84W-B6V8XNexperia |
DIODE ZENER 6.8V 275MW SOT323 |
|
Z4KE180A-E3/73Vishay General Semiconductor – Diodes Division |
DIODE ZENER 180V 1.5W DO204AL |
|
1PMT5944E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 62V 3W DO216AA |
|
BZV55-C39,115Nexperia |
DIODE ZENER 39V 500MW LLDS |
|
1N4755P/TR8Roving Networks / Microchip Technology |
DIODE ZENER 43V 1W DO204AL |
|
1N5256B A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 30V 500MW DO35 |
|
ZMY9V1-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 1W DO213AB |
|
SMAJ4733AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 2W DO214AC |
|
HZS3B2TA-ERochester Electronics |
DIODE ZENER 0.4W |
|
BZT52B2V7-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.7V 410MW SOD123 |
|
CZRFR52C27-HFComchip Technology |
DIODE ZENER 27V 200MW 1005 |
|
MMSZ5226B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.3V 500MW SOD123 |
