类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 16 V |
宽容: | ±1.88% |
功率 - 最大值: | 590 mW |
阻抗(最大)(zzt): | 20 Ohms |
电流 - 反向泄漏@ vr: | 50 nA @ 11.2 V |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | -55°C ~ 150°C (TA) |
安装类型: | Surface Mount |
包/箱: | SOD-123 |
供应商设备包: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZD17C33P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 800MW DO219AB |
|
Z2SMB36Diotec Semiconductor |
DIODE ZENER 36V 2W SMB |
|
BZD27C56P RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 56V 1W SUB SMA |
|
DDZ8V2CSF-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 8.24V 500MW SOD323F |
|
UDZS11B RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 11V 200MW SOD323F |
|
BZD17C30P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 800MW DO219AB |
|
CDLL3038Roving Networks / Microchip Technology |
DIODE ZENER 56V 1W DO213AB |
|
TLZ13-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 500MW SOD80 |
|
MMBZ4706-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 19V 350MW SOT23-3 |
|
1PMT5925C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 10V 3W DO216AA |
|
1PMT4107C/TR7Roving Networks / Microchip Technology |
DIODE ZENER 13V 1W DO216 |
|
BZX84C10 RFGTSC (Taiwan Semiconductor) |
DIODE ZENER 10V 300MW SOT23 |
|
NTE5222ANTE Electronics, Inc. |
DIODE ZENER 110V 10W DO4 |