English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 3.6 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 24 Ohms |
| 电流 - 反向泄漏@ vr: | 10 µA @ 1 V |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
| 工作温度: | -65°C ~ 200°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZG04-200-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 240V 1.25W DO214AC |
|
JAN1N3828C-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 1W DO41 |
|
BZX84C47-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 300MW SOT23-3 |
|
1N4743E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 13V 1W DO204AL |
|
SZ1SMB5915BT3GRochester Electronics |
ZEN SMB REG 3W 3.9V TR |
|
CZRU52C4V3Comchip Technology |
DIODE ZENER 4.3V 150MW 0603 |
|
1N5227C-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 500MW DO35 |
|
JANTX1N3017DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 1W DO213AB |
|
DDZ9714T-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 33V 150MW SOD523 |
|
1N5733DRoving Networks / Microchip Technology |
DIODE ZENER 7.5V 500MW DO35 |
|
BZD27C10PHRFGTSC (Taiwan Semiconductor) |
DIODE ZENER 10V 1W SUB SMA |
|
1N4745AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 16V 1W DO204AL |
|
MMBZ5263C-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 225MW SOT23-3 |
