English
简体中文
DIODE ZENER 39V 1W DO216
FUSE HLDR CART 250V 60A CHASSIS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWERMITE® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 39 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 200 Ohms |
| 电流 - 反向泄漏@ vr: | 10 nA @ 29.65 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-216AA |
| 供应商设备包: | DO-216 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZX84C8V2T-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 8.2V 150MW SOT523 |
|
1PMT5939A/TR13Roving Networks / Microchip Technology |
DIODE ZENER 39V 3W DO216AA |
|
BZX84W-B4V3FNexperia |
DIODE ZENER 4.3V 275MW SOT323 |
|
BZD27B8V2P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 800MW DO219AB |
|
SMBJ4749E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 24V 2W SMBJ |
|
1N4621-1Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 500MW DO7 |
|
BZD27B100P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 100V 800MW DO219AB |
|
BZX84C4V7LT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 4.7V 225MW SOT23-3 |
|
JANTX1N5519C-1Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 500MW DO35 |
|
BZX55C12Rochester Electronics |
DIODE ZENER 12V 500MW DO35 |
|
1PGSMC5359 R7GTSC (Taiwan Semiconductor) |
DIODE ZENER 24V 5W DO214AB |
|
CDLL4717Roving Networks / Microchip Technology |
DIODE ZENER 43V 500MW DO213AB |
|
DZ2J04700LPanasonic |
DIODE ZENER 4.7V 200MW SMINI2 |