类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
电压 - 齐纳 (nom) (vz): | 8.2 V |
宽容: | ±5% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 8 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 1 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
工作温度: | -65°C ~ 200°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTXV1N4118C-1Roving Networks / Microchip Technology |
DIODE ZENER 27V 500MW DO35 |
|
SMBJ4744A/TR13Roving Networks / Microchip Technology |
DIODE ZENER 15V 2W SMBJ |
|
1N4749CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 24V 1W DO204AL |
|
JANTXV1N4960Roving Networks / Microchip Technology |
DIODE ZENER 12V 5W AXIAL |
|
1PMT5933E3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 22V 3W DO216AA |
|
BZG05B4V3-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 1.25W DO214AC |
|
BZD27C56PHMHGTSC (Taiwan Semiconductor) |
DIODE ZENER 56V 1W SUB SMA |
|
MMBZ5258B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 225MW SOT23-3 |
|
BZV49-C7V5,115Nexperia |
DIODE ZENER 7.5V 1W SOT89 |
|
MMBZ5243ELT1GRochester Electronics |
DIODE ZENER 13V 225MW SOT23-3 |
|
1N5743BRoving Networks / Microchip Technology |
DIODE ZENER 20V 500MW DO35 |
|
BZG03C30-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 1.25W DO214AC |
|
MMBZ5262C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 225MW SOT23-3 |