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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 11 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 8 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 8.4 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -65°C ~ 200°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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JANTX1N5526CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 500MW DO213AA |
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1N4761A B0GTSC (Taiwan Semiconductor) |
DIODE ZENER 75V 1W DO204AL |
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SMBJ4742A/TR13Roving Networks / Microchip Technology |
DIODE ZENER 12V 2W SMBJ |
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ZM4733A-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 1W DO213AB |
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1N4739APE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 1W DO204AL |
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ZY150Diotec Semiconductor |
DIODE ZENER 150V 2W DO41 |
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MMBZ5246BT-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 16V 150MW SOT523 |
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MMSZ5232B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 500MW SOD123 |
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1N3315RARoving Networks / Microchip Technology |
DIODE ZENER 16V 50W DO5 |
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BZM55C51-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 500MW MICROMELF |
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1N5987CRoving Networks / Microchip Technology |
DIODE ZENER 3V 500MW DO35 |
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SMBJ5342CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 5W SMBJ |
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GDZ27B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 200MW SOD323 |
