类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 11 V |
宽容: | ±20% |
功率 - 最大值: | 3 W |
阻抗(最大)(zzt): | 5.5 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 8.4 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -65°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMAJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5224B TR PBFREECentral Semiconductor |
DIODE ZENER 2.8V 500MW DO35 |
|
UDZVFHTE-1739BROHM Semiconductor |
DIODE ZENER 39V 200MW UMD2 |
|
BZX585B10 RSGTSC (Taiwan Semiconductor) |
DIODE ZENER 10V 200MW SOD523F |
|
BZX84W-B3V3XNexperia |
DIODE ZENER 3.3V 275MW SOT323 |
|
2EZ12D5-TPMicro Commercial Components (MCC) |
DIODE ZENER 12V 2W DO41 |
|
1PGSMA180Z M2GTSC (Taiwan Semiconductor) |
DIODE ZENER 180V 1.25W DO214AC |
|
SMAJ5917AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 4.7V 3W DO214AC |
|
TZX6V2E-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 500MW DO35 |
|
NZX3V9B,133Rochester Electronics |
NOW NEXPERIA NZX3V9B - ZENER DIO |
|
BZX384C4V3-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 200MW SOD323 |
|
JAN1N4477DRoving Networks / Microchip Technology |
DIODE ZENER 33V 1.5W DO41 |
|
MMBZ5236C-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 225MW SOT23-3 |
|
BZX384C62-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 62V 200MW SOD323 |