English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 30 V |
| 宽容: | ±20% |
| 功率 - 最大值: | 3 W |
| 阻抗（最大）（zzt）: | 28 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 22.8 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-216AA |
| 供应商设备包: | DO-216AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JAN1N4621CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 500MW DO213AA |
|
BZV49-C3V3,115Nexperia |
DIODE ZENER 3.3V 1W SOT89 |
|
BZX84C15-AQDiotec Semiconductor |
DIODE ZENER 15V 300MW SOT23-3 |
|
BZX384C2V7-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.7V 200MW SOD323 |
|
JAN1N4131UR-1Roving Networks / Microchip Technology |
DIODE ZENER 75V DO213AA |
|
JANTX1N5523BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO213AA |
|
1N5247C-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 17V 500MW DO35 |
|
BZX84C10ET1Rochester Electronics |
DIODE ZENER 10V 225MW SOT23-3 |
|
DZ2S30000LPanasonic |
DIODE ZENER 30V 150MW SSMINI2 |
|
MMBZ5258C-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 225MW SOT23-3 |
|
JANTXV1N3826CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 1W DO213AB |
|
GDZ36B-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 200MW SOD323 |
|
1N4743A BK PBFREECentral Semiconductor |
DIODE ZENER 13V 1W DO41 |
