English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 27 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 80 Ohms |
| 电流 - 反向泄漏@ vr: | 50 nA @ 18.9 V |
| 电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-123 |
| 供应商设备包: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MMSZ4702-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 500MW SOD123 |
|
1PMT4113E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 19V 1W DO216 |
|
MTZJ3V9SA R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 3.88V 500MW DO34 |
|
1N4750A-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 1.3W DO41 |
|
BZD27C13PHRTGTSC (Taiwan Semiconductor) |
DIODE ZENER 13.25V 1W SUB SMA |
|
GLL4751A-E3/96Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 1W MELF |
|
JAN1N981CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 68V 500MW DO213AA |
|
BZD17C36P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 800MW DO219AB |
|
BZV55-C4V3,115Nexperia |
DIODE ZENER 4.3V 500MW LLDS |
|
AMMSZ5223B-HFComchip Technology |
DIODE ZENER 2.7V 500MW SOD123 |
|
BZX84C18Rochester Electronics |
DIODE ZENER 18V 300MW SOT23-3 |
|
BZT52B16S RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 16V 200MW SOD323F |
|
BZX84-B5V6,235Nexperia |
DIODE ZENER 5.6V 250MW TO236AB |
