English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/406 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 6.8 V |
| 宽容: | ±1% |
| 功率 - 最大值: | 1.5 W |
| 阻抗（最大）（zzt）: | 2.5 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 4.08 V |
| 电压 - 正向 (vf) (max) @ if: | 1 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | SQ-MELF, A |
| 供应商设备包: | D-5A |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N3309BRoving Networks / Microchip Technology |
DIODE ZENER 10V 50W DO5 |
|
MMBZ5234ELT1GRochester Electronics |
DIODE ZENER 6.2V 225MW SOT23-3 |
|
1PMT5954BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 160V 3W DO216AA |
|
TZMC6V8-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 500MW SOD80 |
|
1N4746AHA0GTSC (Taiwan Semiconductor) |
DIODE ZENER 18V 1W DO204AL |
|
BZD27C16P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 800MW DO219AB |
|
BZV55B7V5 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 7.5V 500MW MINI MELF |
|
PZU4.7B,115Nexperia |
DIODE ZENER 4.7V 310MW SOD323F |
|
JANTXV1N5526C-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 500MW DO35 |
|
SZ1SMB5914BT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 3.6V 3W SMB |
|
CDLL4740ARoving Networks / Microchip Technology |
DIODE ZENER 10V DO213AB |
|
BZT52B11-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 410MW SOD123 |
|
TLZ8V2A-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 500MW SOD80 |
